There are three methods of embedding thermal oxide into silicone wafer :
- Chemical Vapor Deposition (CVD) – this is used in the semiconductor industry to produce thin films. In this case oxide is deposited on the silicon wafer.
- Dry oxidation – allows us to produce a layer of better quality than the wet oxide film, but with a lower growth rate. Hence, it is possible to obtain very thin layers. The following reaction describe the dry oxidation:
- Wet oxidation – In this method we use water instead of oxygen. Water molecule splits out into hydrogen H and hydroxide OH. It dissolves faster in silicon than molecular oxide. Consequently, wet method has a higher growth rate. It is applicable in the production of thicker layers in comparison with the other. The following reaction presents the method:
- growth method,
- crystal orientation,
- oxidation time,
|Thickness range||200 Å-15µm|
|Surface finishing||double/single sided polishing|
|Growth method||wet or dry method, CVD|
|Diameter ranging||25,4 mm – 300 mm|
|Temperature||800C° – 1200C°|
Small quantities or individually packed wafers are available.
Should you need any further information or you are unable to find the wafer specification you require, please do not hesitate to contact us: email@example.com or TOLL FREE in Spain (+34) 900 838 909, Portugal (+351) 800 180 183 or France +33 805 080 082.