There are three methods of embedding thermal oxide into silicone wafer :
- Chemical Vapor Deposition (CVD) – this is used in the semiconductor industry to produce thin films. In this case oxide is deposited on the silicon wafer.
- Dry oxidation – allows us to produce a layer of better quality than the wet oxide film, but with a lower growth rate. Hence, it is possible to obtain very thin layers. The following reaction describe the dry oxidation:
- Wet oxidation – In this method we use water instead of oxygen. Water molecule splits out into hydrogen H and hydroxide OH. It dissolves faster in silicon than molecular oxide. Consequently, wet method has a higher growth rate. It is applicable in the production of thicker layers in comparison with the other. The following reaction presents the method:
- growth method,
- crystal orientation,
- oxidation time,
|Thickness range||200 Å-15µm|
|Surface finishing||double/single sided polishing|
|Growth method||wet or dry method, CVD|
|Diameter ranging||25,4 mm – 300 mm|
|Temperature||800C° – 1200C°|
Small quantities or individually packed wafers are available.
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