4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:110; Resistivity:3-9 Ohm*cm)
SKU: SIL04111001009
Categories: Wafer diameter, Dopant compound, Phosphorus, Surface, Single side polished, Material, Silicon Wafer, 4 inch Wafer
Related products
-
2 inch Silicon Wafer P/Boron SSP (Thickness:275+/-25; Orientation:100; Resistivity:1-10 Ohm*cm)
-
4 inch Silicon Wafer P/Boron SSP (Thickness:400+/-30; Orientation:100; Resistivity:0-1 Ohm*cm)
-
2 inch Silicon Wafer P/Boron SSP (Thickness:275+/-25; Orientation:111; Resistivity:80 Ohm*cm)
-
4 inch Silicon Wafer N/Phos DSP (Thickness:400+-/10; Orientation:100; Resistivity:1-10 Ohm*cm)