Gallium Arsenide

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Gallium Arsenide Wafers

This compound is synthetically produced for electronic industry due to its semiconductor properties.

Gallium Arsenide GaAs – an inorganic compound of gallium and arsenic.

The second one after silicon (Si) material most commonly used in micro- and optoelectronics and microwave technology.

Gallium arsenide shows greater electromagnetic radiation resistance than silicon.

GaAs electronic devices can operate at frequencies exceeding 250 GHz. Semiconductor parameter – energy interruption (at 300 K) = 1,424 eV.

Wafers in our offer are produced from crystals using the VGF, LCP and Horizontal Synthesis method.

Liquid encapsulated Czochralski (LCP) – This method requires complicated equipment, because it creates a high pressure of arsenic vapor, but it allows to overcome many  problems of gradual growth of this crystal.

Vertical Gradient Freeze (VGF) – the flagship method of producing GaAs wafer, provides a low dislocation density in the crystal.

Small quantities or individually packed wafers are available.

Galluim Arsenide wafer specifications

Wafer diameter2ʺ-200 mm
Wafer thickness350µm – 635µm
Surface finishingepitaxy – ready finishing
Crystal orientation(100) (111) (110)…
DopantN-type, P-type or undoped
Dopant materialZn, C, Te, Si…
Crystal growthLEC (Liquid encapsulated Czochralski), VGF (Vertical Gradient Freeze)

Should you need any further information or you are unable to find the wafer specification you require, please do not hesitate to contact us: or TOLL FREE in Spain (+34) 622 375 955, Portugal (+351) 800 180 183 or France +33 805 080 082.

To know more about Gallium Wafer contact us today!

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