Gallium Arsenide GaAs – an inorganic compound of gallium and arsenic.
This compound is synthetically produced for electronic industry due to its semiconductor properties. The second one after silicon (Si) material most commonly used in micro- and optoelectronics and microwave technology.
Gallium arsenide shows greater electromagnetic radiation resistance than silicon. GaAs electronic devices can operate at frequencies exceeding 250 GHz. Semiconductor parameter – energy interruption (at 300 K) = 1,424 eV.
Wafers in our offer are produced from crystals using the VGF, LCP and Horizontal Synthesis method.
Vertical Gradient Freeze (VGF) – the flagship method of producing GaAs wafer, provides a low dislocation density in the crystal.
Liquid encapsulated Czochralski (LCP) – This method requires complicated equipment, because it creates a high pressure of arsenic vapor, but it allows to overcome many problems of gradual growth of this crystal.
|Wafer diameter||2ʺ-200 mm|
|Wafer thickness||350µm – 635µm|
|Surface finishing||epitaxy – ready finishing|
|Crystal orientation||(100) (111) (110)…|
|Dopant||N-type, P-type or undoped|
|Dopant material||Zn, C, Te, Si…|
|Crystal growth||LEC (Liquid encapsulated Czochralski), VGF (Vertical Gradient Freeze)|
Small quantities or individually packed wafers are available.
Should you need any further information or you are unable to find the wafer specification you require, please do not hesitate to contact us: firstname.lastname@example.org or TOLL FREE in Spain (+34) 900 838 909, Portugal (+351) 800 180 183 or France +33 805 080 082.