Indium Phosphide InP is a semiconductor, crystallized in face-centered cubic structure, which we commonly name zincblende. It has the same structure as most of the III-V semiconductors. This material is also characterized by long-lived optical phonons, one of the longest of any zincblende´s compound.
III-V semiconductors are compounds that were formed by the elements of groups 3 and 5 of the periodic table of Mendeleev. Thanks to their unique properties, we can use the compounds in many areas such as telecommunication and microelectronic systems or as a substrate for various epitaxial applications. They are perfect for integrated photonic applications.
Generally our Indium Phosphide InP wafers are produced based on the Czochralski method. They are doped with elements such as zinc, tin, sulfur or iron.
We also offer a wafer surface finishing services like polishing or etching.
|Wafer thickness||275µm – 375µm|
|Surface finishing||double/single sided polishing|
|Crystal orientation||(100) (111) (110)…|
|Dopant||N-type, P-type or undoped|
|Dopant material||Zn, Fe, S, Sn…|
Small quantities or individually packed wafers are available.
Should you need any further information or you are unable to find the wafer specification you require, please do not hesitate to contact us: [email protected] or TOLL FREE in Spain (+34) 900 838 909, Portugal (+351) 800 180 183 or France +33 805 080 082.