2 inch Silicon Wafer N/Phos DSP (Thickness:300+/-25; Orientation:100; Resistivity:10-30 Ohm*cm)

SKU: SIL02210001001 Categories: Surface, Doble side polished, Material, Silicon Wafer, Wafer diameter, Dopant compound, Phosphorus, 2 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	2
Type / Dopant	N/Phos
Orientation	100
Grade	Test
Primary flat	Semi std
Secondary Flat	none
Thickness	300+/-25
Surface	Double Side Polished
Resistivity Ohm*cm	10-30

2 inch Silicon Wafer N/Phos DSP (Thickness:300+/-25; Orientation:100; Resistivity:10-30 Ohm*cm)

2 inch Silicon Wafer N/Phos DSP (Thickness:300+/-25; Orientation:100; Resistivity:10-30 Ohm*cm)

Additional information

Related products

4 inch Silicon Wafer N/Phos As-cut (Thickness:545+/-20; Orientation:111; Resistivity:3-30 Ohm*cm)

3 inch Silicon Wafer P/Boron SSP (Thickness:381+/-25; Orientation:100; Resistivity:1-10 Ohm*cm)

5 mm side Saphire Square Substrate SSP (Orientation: M-plane (10-10))

4 inch Silicon Wafer P/Boron SSP (Thickness:400+/-30; Orientation:100; Resistivity:0-1 Ohm*cm)

Explore the Frontier of Technological Progress with Our Premium Silicon Wafers and Advanced Materials

FRANCE

PORTUGAL

SPAIN