4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:100; Resistivity:0,1-0,5 Ohm*cm)

SKU: SIL04110001008 Categories: Silicon Wafer, Wafer diameter, Dopant compound, Phosphorus, Surface, Single side polished, Material, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	N/Phos
Orientation	100
Grade	Test
Primary flat	Semi std
Secondary Flat	180 deg
Thickness	525+/-25
Surface	Single Side Polished
Resistivity Ohm*cm	0,1-0,5

4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:100; Resistivity:0,1-0,5 Ohm*cm)

4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:100; Resistivity:0,1-0,5 Ohm*cm)

Additional information

Related products

4 inch Silicon Wafer N/Phos SSP (Thickness:450+/-30; Orientation:100; Resistivity:0-1 Ohm*cm)

4 inch Silicon Wafer P/Boron SSP (Thickness:400+/-30; Orientation:100; Resistivity:0-1 Ohm*cm)

4 inch Silicon Wafer P/Boron SSP (Thickness:400+-/30; Orientation:111; Resistivity:0-1 Ohm*cm)

5 mm side Saphire Square Substrate SSP (Orientation: R-plane(1-102))

Explore the Frontier of Technological Progress with Our Premium Silicon Wafers and Advanced Materials

FRANCE

PORTUGAL

SPAIN