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Thermal Oxide
Silicon Nitride
Glass / Quartz / Sapphire
Indium Phosphide
Gallium Arsenide
Wafer services
Crystal Growing
Polishing
Grinding
Dicing
Etching Process
Bonding
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/ XXX-4 inch Silicon Wafer P/Boron (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)
XXX-4 inch Silicon Wafer P/Boron (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)
1.000,00
€
XXX-4 inch Silicon Wafer P/Boron (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm) quantity
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SKU:
1WFX041001121
Category:
Uncategorized
Additional information
Additional information
Material
Silicon Wafer
Diameter (inch)
4
Type / Dopant
P/Boron
Orientation
100
Thickness
525+/-25
Grade
Test
Surface
DSP
Primary flat
Semi std
Secondary Flat
Resistivity Ohm*cm
1-20
Max. Resistivity
20
Min. Resistivity
1