XXX-4 inch Silicon Wafer P/Boron (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

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XXX-4 inch Silicon Wafer P/Boron (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

1.000,00€

SKU: 1WFX041001121 Categories: Wafer diameter, Dopant compound, Boron, Material, Silicon Wafer, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	P/Boron
Orientation	100
Thickness	525+/-25
Grade	Test
Surface	DSP
Primary flat	Semi std
Secondary Flat
Resistivity Ohm*cm	1-20
Max. Resistivity	20
Min. Resistivity	1

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