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Si Special Wafers
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Thermal Oxide
Silicon Nitride
Glass / Quartz / Sapphire
Indium Phosphide
Gallium Arsenide
Wafer services
Crystal Growing
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Etching Process
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/ 3 inch Silicon Wafer P/Boron SSP (Thickness:380+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)
3 inch Silicon Wafer P/Boron SSP (Thickness:380+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)
14,40
€
3 inch Silicon Wafer P/Boron SSP (Thickness:380+/-25; Orientation:100; Resistivity:1-20 Ohm*cm) quantity
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SKU:
SIL03110011016
Additional information
Additional information
Material
Silicon Wafer
Diameter (inch)
3
Type / Dopant
P/Boron
Orientation
100
Grade
Test
Primary flat
Semi std
Secondary Flat
none
Thickness
380+/-25
Surface
Single Side Polished
Resistivity Ohm*cm
1-20