4 inch Silicon Wafer P/Boron SSP (Thickness:500+-/30; Orientation:100; Resistivity:1-30 Ohm*cm)

SKU: SIL04110011019 Categories: Wafer diameter, Dopant compound, Boron, Surface, Single side polished, Material, Silicon Wafer, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	P/Boron
Orientation	100
Grade	Test
Primary flat	Semi std
Secondary Flat	90 deg
Thickness	500+-/30
Surface	Single Side Polished
Resistivity Ohm*cm	1-30

4 inch Silicon Wafer P/Boron SSP (Thickness:500+-/30; Orientation:100; Resistivity:1-30 Ohm*cm)

4 inch Silicon Wafer P/Boron SSP (Thickness:500+-/30; Orientation:100; Resistivity:1-30 Ohm*cm)

Additional information

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