4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)
SKU: SIL04111111023
Categories: Silicon Wafer, Dopant compound, Boron, Surface, Single side polished, Material, 4 inch Wafer
Related products
-
4 inch Silicon Wafer N/Phos SSP (Thickness:450+/-30; Orientation:100; Resistivity:0-1 Ohm*cm)
-
5 mm side Saphire Square Substrate SSP (Orientation: (10-14))
-
2 inch Silicon Wafer P/Boron SSP (Thickness:300+/-25; Orientation:100; Resistivity:5-10 Ohm*cm)
-
5 mm side Saphire Square Substrate SSP (Orientation: N-plane (11-23) )