4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)

Name: 4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)
SKU: SIL04111111023
Price: 16.50 EUR
Availability: InStock

Home » Shop » Dopant compound » Boron » 4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)

4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)

16,50€

SKU: SIL04111111023 Categories: Silicon Wafer, Dopant compound, Boron, Surface, Single side polished, Material, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	P/Boron
Orientation	111
Grade	Test
Primary flat	Semi std
Secondary Flat	none
Thickness	525+/-25
Surface	Single Side Polished
Resistivity Ohm*cm	1-10

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4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)

4 inch Silicon Wafer P/Boron SSP (Thickness:525+/-25; Orientation:111; Resistivity:1-10 Ohm*cm)

Additional information

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