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Si Special Wafers
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Thermal Oxide
Silicon Nitride
Glass / Quartz / Sapphire
Indium Phosphide
Gallium Arsenide
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Crystal Growing
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/ 4 inch Silicon Wafer P/Boron SSP (Thickness:400+-/30; Orientation:111; Resistivity:0-1 Ohm*cm)
4 inch Silicon Wafer P/Boron SSP (Thickness:400+-/30; Orientation:111; Resistivity:0-1 Ohm*cm)
16,00
€
4 inch Silicon Wafer P/Boron SSP (Thickness:400+-/30; Orientation:111; Resistivity:0-1 Ohm*cm) quantity
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SKU:
SIL04111111027
Additional information
Additional information
Material
Silicon Wafer
Diameter (inch)
4
Type / Dopant
P/Boron
Orientation
111
Grade
Test
Primary flat
Semi std
Secondary Flat
45 deg
Thickness
400+-/30
Surface
Single Side Polished
Resistivity Ohm*cm
0-1