4 inch Silicon Wafer N/Phos DSP (Thickness:400+-/10; Orientation:100; Resistivity:1-10 Ohm*cm)

SKU: SIL04210001005 Categories: Doble side polished, Material, Silicon Wafer, Wafer diameter, Dopant compound, Phosphorus, Surface, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	N/Phos
Orientation	100
Grade	Test
Primary flat	Semi std
Secondary Flat	180 deg
Thickness	400+-/10
Surface	Double Side Polished
Resistivity Ohm*cm	1-10

4 inch Silicon Wafer N/Phos DSP (Thickness:400+-/10; Orientation:100; Resistivity:1-10 Ohm*cm)

4 inch Silicon Wafer N/Phos DSP (Thickness:400+-/10; Orientation:100; Resistivity:1-10 Ohm*cm)

Additional information

Related products

2 inch Silicon Wafer N/Phos SSP (Thickness:275+/-25; Orientation:111; Resistivity:7,5-12,5 Ohm*cm)

5 mm side Saphire Square Substrate SSP (Orientation: M-plane (10-10))

2 inch Silicon Wafer P/Boron SSP (Thickness:275+/-25; Orientation:100; Resistivity:0,01-0,02 Ohm*cm)

2 inch Silicon Wafer P/Boron SSP (Thickness:275+/-25; Orientation:111; Resistivity:80 Ohm*cm)

Explore the Frontier of Technological Progress with Our Premium Silicon Wafers and Advanced Materials

FRANCE

PORTUGAL

SPAIN