4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

SKU: SIL04210011021 Categories: Wafer diameter, Dopant compound, Boron, Surface, Single side polished, Material, Silicon Wafer, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	P/Boron
Orientation	100
Grade	Test
Primary flat	Semi std
Secondary Flat	90 deg
Thickness	525+/-25
Surface	Double Side Polished
Resistivity Ohm*cm	1-20

4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

Additional information

Related products

5 mm side Saphire Square Substrate SSP (Orientation: (10-14))

5 mm side Saphire Square Substrate SSP (Orientation: R-plane(1-102))

5 mm side Saphire Square Substrate SSP (Orientation: M-plane (10-10))

2 inch Silicon Wafer P/Boron SSP (Thickness:300+/-25; Orientation:100; Resistivity:0,001-0,005 Ohm*cm)

Explore the Frontier of Technological Progress with Our Premium Silicon Wafers and Advanced Materials

FRANCE

PORTUGAL

SPAIN