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Si Special Wafers
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Thermal Oxide
Silicon Nitride
Glass / Quartz / Sapphire
Indium Phosphide
Gallium Arsenide
Wafer services
Crystal Growing
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Etching Process
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/ 4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)
4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)
19,50
€
4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm) quantity
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SKU:
SIL04210011021
Additional information
Additional information
Material
Silicon Wafer
Diameter (inch)
4
Type / Dopant
P/Boron
Orientation
100
Grade
Test
Primary flat
Semi std
Secondary Flat
90 deg
Thickness
525+/-25
Surface
Double Side Polished
Resistivity Ohm*cm
1-20