4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

SKU: SIL04210011021 Categories: Dopant compound, Boron, Surface, Single side polished, Material, Silicon Wafer, Wafer diameter, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	P/Boron
Orientation	100
Grade	Test
Primary flat	Semi std
Secondary Flat	90 deg
Thickness	525+/-25
Surface	Double Side Polished
Resistivity Ohm*cm	1-20

4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

Additional information

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