4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:110; Resistivity:3-9 Ohm*cm)

SKU: SIL04111001009 Categories: Phosphorus, Surface, Single side polished, Material, Silicon Wafer, Wafer diameter, Dopant compound, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	N/Phos
Orientation	110
Grade	Test
Primary flat	Semi std
Secondary Flat	70,5 deg
Thickness	525+/-25
Surface	Single Side Polished
Resistivity Ohm*cm	3-9

4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:110; Resistivity:3-9 Ohm*cm)

4 inch Silicon Wafer N/Phos SSP (Thickness:525+/-25; Orientation:110; Resistivity:3-9 Ohm*cm)

Additional information

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