4 inch Silicon Wafer P/Boron SSP (Thickness:420+/-20; Orientation:111; Resistivity:0,004-0,006 Ohm*cm)

SKU: SIL04111111022 Categories: Wafer diameter, Dopant compound, Boron, Surface, Single side polished, Material, Silicon Wafer, 4 inch Wafer

Additional information

Additional information

Material	Silicon Wafer
Diameter (inch)	4
Type / Dopant	P/Boron
Orientation	111
Grade	Test
Primary flat	Semi std
Secondary Flat	45 deg
Thickness	420+/-20
Surface	Single Side Polished
Resistivity Ohm*cm	0,004-0,006

4 inch Silicon Wafer P/Boron SSP (Thickness:420+/-20; Orientation:111; Resistivity:0,004-0,006 Ohm*cm)

4 inch Silicon Wafer P/Boron SSP (Thickness:420+/-20; Orientation:111; Resistivity:0,004-0,006 Ohm*cm)

Additional information

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