Dopant compound

Showing 19–27 of 29 results

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  4 inch Silicon Wafer P/Boron DSP (Thickness:525+/-25; Orientation:100; Resistivity:1-20 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:400+-/30; Orientation:111; Resistivity:0-1 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:400+/-30; Orientation:100; Resistivity:0-1 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:400+/-30; Orientation:111; Resistivity:0-1 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:400+/-30; Orientation:111; Resistivity:0-1 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:420+/-20; Orientation:111; Resistivity:0,004-0,006 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:450+/-30; Orientation:100; Resistivity:0,001-0,005 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:450+/-30; Orientation:111; Resistivity:0-30 Ohm*cm)

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  4 inch Silicon Wafer P/Boron SSP (Thickness:500+-/30; Orientation:100; Resistivity:1-30 Ohm*cm)